Studying the single--electron transistor by photoionization

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dc.creatorBaldea, Ioan
dc.creatorKoppel, Horst
dc.date2008-11-17
dc.date2009-03-16
dc.date.accessioned2026-07-07T13:07:38Z
dc.date.available2026-07-07T13:07:38Z
dc.descriptionWe present theoretical results demonstrating that photoionization can be a useful tool for investigating single--electron transistors. Suggestions are given on how to conduct experiments using photoionization alone or in combination with transport measurements.
dc.identifierhttps://arxiv.org/abs/0811.2757
dc.identifierhttp://arxiv.org/abs/0811.2757
dc.identifierPhys. Rev. B 79, 165317 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.165317
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/228155
dc.subjectOther Condensed Matter
dc.subjectStrongly Correlated Electrons
dc.titleStudying the single--electron transistor by photoionization
dc.typetext

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