Plasmon Amplification through Stimulated Emission at Terahertz Frequencies in Graphene

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dc.creatorRana, Farhan
dc.creatorAhmad, Faisal R.
dc.date2007-04-04
dc.date2007-05-26
dc.date.accessioned2026-07-07T08:09:12Z
dc.date.available2026-07-07T08:09:12Z
dc.descriptionWe show that plasmons in two-dimensional graphene can have net gain at terahertz frequencies. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through the process of stimulated emission. We calculate plasmon gain for different electron-hole densities and temperatures and show that the gain values can exceed $10^{4}$ cm$^{-1}$ in the 1-10 terahertz frequency range, for electron-hole densities in the $10^{9}$-$10^{11}$ cm$^{-2}$ range, even when plasmon energy loss due to intraband scattering is considered. Plasmons are found to exhibit net gain for intraband scattering times shorter than 100 fs. Such high gain values could allow extremely compact terahertz amplifiers and oscillators that have dimensions in the 1-10 $μ$m range.
dc.description13 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/0704.0607
dc.identifierhttp://arxiv.org/abs/0704.0607
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/131469
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titlePlasmon Amplification through Stimulated Emission at Terahertz Frequencies in Graphene
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