Crystal Growth and Characterization of Doped CZT Crystals

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dc.creatorKolesnikov, N. N.
dc.creatorVesnovskii, S. P.
dc.creatorJames, R. B.
dc.creatorBerzigiarova, N. S.
dc.creatorAlov, D. L.
dc.creatorZvenigorodskii, A. G.
dc.date2001-07-04
dc.date.accessioned2026-07-07T02:42:02Z
dc.date.available2026-07-07T02:42:02Z
dc.descriptionCd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The doping was carried out by three different ways: 1) by adding of the pure metals during growth runs; 2) by adding of the tellurides of the metals during growth runs; or 3) by inserting of the metal tellurides during synthesis of the starting CZT material. Some of the growth process parameters were also varied. The as-grown CZT ingots had diameters of either 15 or 38 mm. The influence of the doping on CZT properties, particularly the conductivity type and specific electrical resistivity, will be discussed. Energy spectra from alpha particles (U-233, Ra-226, and U-233+Pu-239+Pu-238) and from different gamma sources (Cs-137, Co-60, Co-57, Am-241) will be reported.
dc.description9 pages, 11 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0107081
dc.identifierhttp://arxiv.org/abs/cond-mat/0107081
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17979
dc.subjectMaterials Science
dc.titleCrystal Growth and Characterization of Doped CZT Crystals
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