1/f noise in hopping conduction: Role of multi-site aggregates

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dc.creatorKozub, V. I.
dc.creatorGalperin, Y. M.
dc.creatorVinokur, V.
dc.date2004-12-01
dc.date2005-12-17
dc.date.accessioned2026-07-07T06:37:23Z
dc.date.available2026-07-07T06:37:23Z
dc.descriptionWe propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the noise with 1/f-type spectrum extends down to practically arbitrarily low frequencies.
dc.description6pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0412022
dc.identifierhttp://arxiv.org/abs/cond-mat/0412022
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/100373
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.title1/f noise in hopping conduction: Role of multi-site aggregates
dc.typetext

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