A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields

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dc.creatorKempa, H.
dc.creatorEsquinazi, P.
dc.date2003-04-04
dc.date.accessioned2026-07-07T02:50:37Z
dc.date.available2026-07-07T02:50:37Z
dc.descriptionInspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor based on graphite. A relatively thick layer of boron nitride turned out to be able to serve as a gate dielectric. This, however, limits the achievable electric gate field, which might be the reason for our observation of no charge-doping effect.
dc.description3 pages, 3 figures, submitted to Europ. Phys. J. AP
dc.identifierhttps://arxiv.org/abs/cond-mat/0304105
dc.identifierhttp://arxiv.org/abs/cond-mat/0304105
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21164
dc.subjectStrongly Correlated Electrons
dc.titleA Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields
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