Effect of pressure and Ir substitution in YbRh2Si2

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dc.creatorMacovei, M. E.
dc.creatorNicklas, M.
dc.creatorKrellner, C.
dc.creatorGeibel, C.
dc.creatorSteglich, F.
dc.date2008-10-14
dc.date.accessioned2026-07-07T10:16:46Z
dc.date.available2026-07-07T10:16:46Z
dc.descriptionIn this article we present a study of the electrical resistivity of Yb(Rh-xIrx)2Si2, x=0.06, under high pressure and in magnetic field. Ir substitution is expanding the unit cell and leads to a suppression of the antiferromagnetic transition temperature to zero, where eventually a quantum critical point (QCP) exists. We applied hydrostatic pressure to reverse the effect of substitution. Our results indicate that Yb(Rh0.94Ir0.06)2Si2 is situated in the immediate proximity to a volume controlled QCP, but still on the magnetically ordered side of the phase diagram. The temperature - pressure phase diagram of Yb(Rh0.94Ir0.06)2Si2 resembles that of the pure compound. Substitution acts mainly as chemical pressure. Disorder introduced by substitution has only minor effects.
dc.description9 pages, 7 figures, accepted for publication in J. Phys.: Condens. Matter
dc.identifierhttps://arxiv.org/abs/0810.2471
dc.identifierhttp://arxiv.org/abs/0810.2471
dc.identifierJ. Phys.: Condens. Matter 20, 505205 (2008)
dc.identifierdoi:10.1088/0953-8984/20/50/505205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/173626
dc.subjectStrongly Correlated Electrons
dc.titleEffect of pressure and Ir substitution in YbRh2Si2
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