Tuning the electronic structure of graphene by ion irradiation

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dc.creatorTapaszto, Levente
dc.creatorDobrik, Gergely
dc.creatorNemes-Incze, Peter
dc.creatorVertesy, Gabor
dc.creatorLambin, Philippe
dc.creatorBiro, Laszlo P
dc.date2009-01-20
dc.date.accessioned2026-07-07T12:32:08Z
dc.date.available2026-07-07T12:32:08Z
dc.descriptionMechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.
dc.identifierhttps://arxiv.org/abs/0901.3021
dc.identifierhttp://arxiv.org/abs/0901.3021
dc.identifierPhys. Rev. B 78, 233407 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.233407
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/216684
dc.subjectMesoscale and Nanoscale Physics
dc.titleTuning the electronic structure of graphene by ion irradiation
dc.typetext

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