Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As

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dc.creatorGareev, R. R.
dc.creatorPetukhov, A.
dc.creatorSchlapps, M.
dc.creatorDoeppe, M.
dc.creatorSadowski, J.
dc.creatorSperl, M.
dc.creatorWegscheider, W.
dc.date2008-06-16
dc.date.accessioned2026-07-07T09:44:50Z
dc.date.available2026-07-07T09:44:50Z
dc.descriptionMBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H// direction. We connect GAMR with anisotropic spin-orbit interaction resulting in formation of high- and low- resistance states with different localization along non-equivalent easy axes.
dc.description11 pages, 3 figures,submitted to APL
dc.identifierhttps://arxiv.org/abs/0806.2590
dc.identifierhttp://arxiv.org/abs/0806.2590
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163011
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleMetal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As
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