Valley splitting of Si/SiGe heterostructures in tilted magnetic fields

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dc.creatorLai, K.
dc.creatorLu, T. M.
dc.creatorPan, W.
dc.creatorTsui, D. C.
dc.creatorLyon, S.
dc.creatorLiu, J.
dc.creatorXie, Y. H.
dc.creatorMuhlberger, M.
dc.creatorSchaffler, F.
dc.date2006-01-27
dc.date.accessioned2026-07-07T06:57:49Z
dc.date.available2026-07-07T06:57:49Z
dc.descriptionWe have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $ν=3$ ($Δ_3$) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear density dependence of $Δ_3$ on the electron density was observed, while the slope of these two configurations differs by more than a factor of two. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of $Δ_3$ before and after the coincidence.
dc.descriptionREVTEX 4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0601637
dc.identifierhttp://arxiv.org/abs/cond-mat/0601637
dc.identifierPhys. Rev. B 73, 161301(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.73.161301
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/107114
dc.subjectMesoscale and Nanoscale Physics
dc.titleValley splitting of Si/SiGe heterostructures in tilted magnetic fields
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