Enhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing

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dc.creatorOzerov, Igor
dc.creatorArab, Madjid
dc.creatorSafarov, Viatcheslav I.
dc.creatorMarine, Wladimir
dc.creatorGiorgio, Suzanne
dc.creatorSentis, Marc
dc.creatorNanai, L.
dc.date2003-11-13
dc.date.accessioned2026-07-07T02:54:44Z
dc.date.available2026-07-07T02:54:44Z
dc.descriptionPulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL) spectra: first, the efficiency of the exciton PL increases due to decrease of the number of non-radiative recombination centers; second, the intensity of the defect-related orange band decreases because of the removing of excessive oxygen trapped into the films during deposition. However, annealing in the ambient air also increases the intensity of the green band related to oxygen vacancies. We show that the combination of laser annealing and passivation of oxygen vacancies by hydrogen results in films free of defect-related emission and keeps intact their nanostructural character.
dc.identifierhttps://arxiv.org/abs/cond-mat/0311310
dc.identifierhttp://arxiv.org/abs/cond-mat/0311310
dc.identifierAppl. Surf. Sci. 226 (2004) 242-248
dc.identifierdoi:10.1016/j.apsusc.2003.11.038
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22677
dc.subjectMaterials Science
dc.titleEnhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing
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