Electron-electron interaction at decreasing $k_Fl$

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dc.creatorMinkov, G. M.
dc.creatorRut, O. E.
dc.creatorGermanenko, A. V.
dc.creatorSherstobitov, A. A.
dc.creatorShashkin, V. I.
dc.creatorKhrykin, O. I.
dc.creatorZvonkov, B. N.
dc.date2002-09-25
dc.date.accessioned2026-07-07T12:08:19Z
dc.date.available2026-07-07T12:08:19Z
dc.descriptionThe contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_Fl$ decrease.
dc.description5 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0209584
dc.identifierhttp://arxiv.org/abs/cond-mat/0209584
dc.identifierPhys. Rev. B 67, 205306 (2003)
dc.identifierdoi:10.1103/PhysRevB.67.205306
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209279
dc.subjectDisordered Systems and Neural Networks
dc.titleElectron-electron interaction at decreasing $k_Fl$
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