MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

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dc.creatorKowalski, B. J.
dc.creatorKowalik, I. A.
dc.creatorIwanowski, R. J.
dc.creatorLusakowska, E.
dc.creatorSawicki, M.
dc.creatorSadowski, J.
dc.creatorGrzegory, I.
dc.creatorPorowski, S.
dc.date2004-08-05
dc.date2004-10-28
dc.date.accessioned2026-07-07T02:59:36Z
dc.date.available2026-07-07T02:59:36Z
dc.descriptionSpontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
dc.description11 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0408111
dc.identifierhttp://arxiv.org/abs/cond-mat/0408111
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24571
dc.subjectMaterials Science
dc.titleMnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
dc.typetext

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