A simple model for the metal-insulator transition in a two-dimensional electron gas
| dc.creator | Flores, J. C. | |
| dc.creator | Bellani, V. | |
| dc.creator | Dominguez-Adame, F. | |
| dc.date | 1999-12-27 | |
| dc.date.accessioned | 2026-07-07T03:15:48Z | |
| dc.date.available | 2026-07-07T03:15:48Z | |
| dc.description | We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a threshold carrier density above which this effect is relevant. The predicted value agrees remarkably well with the onset for the insulator to quasi-metallic transition recently observed in several experiments in SiO2-Si and AlGaAs-GaAs heterojunctions. | |
| dc.description | REVTeX 3.0, 8 pages, 1 Postscript figure included | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9912457 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9912457 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/30116 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | A simple model for the metal-insulator transition in a two-dimensional electron gas | |
| dc.type | text |