Selective epitaxial growth of GaAs on Ge by MOCVD

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dc.creatorBrammertz, Guy
dc.creatorMols, Yves
dc.creatorDegroote, Stefan
dc.creatorLeys, Maarten
dc.creatorVan Steenbergen, Jan
dc.creatorBorghs, Gustaaf
dc.creatorCaymax, Matty
dc.date2007-03-26
dc.date.accessioned2026-07-07T07:53:46Z
dc.date.available2026-07-07T07:53:46Z
dc.descriptionWe have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti phase domains in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers.
dc.description14 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703662
dc.identifierhttp://arxiv.org/abs/cond-mat/0703662
dc.identifierJournal of Crystal Growth, Volume 297, Issue 1, 15 December 2006, Pages 204-210
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126348
dc.subjectMaterials Science
dc.titleSelective epitaxial growth of GaAs on Ge by MOCVD
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