Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

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dc.creatorSenz, V.
dc.creatorDoetsch, U.
dc.creatorGennser, U.
dc.creatorIhn, T.
dc.creatorHeinzel, T.
dc.creatorEnsslin, K.
dc.creatorHartmann, R.
dc.creatorGruetzmacher, D.
dc.date1999-03-24
dc.date1999-11-29
dc.date.accessioned2026-07-07T03:13:07Z
dc.date.available2026-07-07T03:13:07Z
dc.descriptionThe low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.
dc.description4 pages (RevTeX), 3 figures (postscript) replaced by version published in special issue of Annalen d. Physik
dc.identifierhttps://arxiv.org/abs/cond-mat/9903367
dc.identifierhttp://arxiv.org/abs/cond-mat/9903367
dc.identifierAnnalen d. Physik, 8, Special Issue, 237-240, 1999
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29173
dc.subjectMesoscale and Nanoscale Physics
dc.titleMetal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis
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