Bipolar single-wall carbon nanotube field-effect transistor

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dc.creatorBabic, Bakir
dc.creatorIqbal, Mahdi
dc.creatorSchonenberger, Christian
dc.date2002-09-04
dc.date.accessioned2026-07-07T02:47:07Z
dc.date.available2026-07-07T02:47:07Z
dc.descriptionWe use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At low-temperatures, our samples act as single-electron transistors where the transport mechanism is mainly governed by Coulomb blockade. The measurements reveal very rich quantized energy level spectra spanning from valence to conduction band. The Coulomb diamonds have similar addition energies on both sides of the semiconducting gap. Signatures of subbands population has been observed.
dc.description11 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0209081
dc.identifierhttp://arxiv.org/abs/cond-mat/0209081
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19889
dc.subjectMesoscale and Nanoscale Physics
dc.titleBipolar single-wall carbon nanotube field-effect transistor
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