Gate-induced insulating state in bilayer graphene devices

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dc.creatorOostinga, Jeroen B.
dc.creatorHeersche, Hubert B.
dc.creatorLiu, Xinglan
dc.creatorMorpurgo, Alberto F.
dc.creatorVandersypen, Lieven M. K.
dc.date2007-07-17
dc.date2007-12-04
dc.date.accessioned2026-07-07T08:46:37Z
dc.date.available2026-07-07T08:46:37Z
dc.descriptionThe potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state - with large suppression of the conductivity - in bilayer graphene, by using a double-gate device configuration that allows an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
dc.description17 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0707.2487
dc.identifierhttp://arxiv.org/abs/0707.2487
dc.identifierNature Materials, published online 2 dec 2007
dc.identifierdoi:10.1038/nmat2082
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143307
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleGate-induced insulating state in bilayer graphene devices
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