Spin-dependent transport in the p-type ultra-narrow silicon quantum well

Simple item page
dc.creatorBagraev, N. T.
dc.creatorBovt, M. I.
dc.creatorGehlhoff, W.
dc.creatorGuimbitskaya, O. N.
dc.creatorKlyachkin, L. E.
dc.creatorMalyarenko, A. M.
dc.creatorMashkov, V. A.
dc.creatorRomanov, V. V.
dc.creatorRykov, S. A.
dc.date2006-08-29
dc.date.accessioned2026-07-07T07:19:50Z
dc.date.available2026-07-07T07:19:50Z
dc.descriptionWe present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.
dc.description5 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608628
dc.identifierhttp://arxiv.org/abs/cond-mat/0608628
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114776
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleSpin-dependent transport in the p-type ultra-narrow silicon quantum well
dc.typetext

Files

Collections

arXiv