Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition

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dc.creatorDubrovskii, Yu. V.
dc.creatorVolkov, V. A.
dc.creatorEaves, L.
dc.creatorVdovin, E. E.
dc.creatorMakarovskii, O. N.
dc.creatorPortal, J. -C.
dc.creatorHenini, M.
dc.creatorHill, G.
dc.date2005-01-05
dc.date2005-01-06
dc.date.accessioned2026-07-07T03:03:03Z
dc.date.available2026-07-07T03:03:03Z
dc.descriptionMagnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.
dc.descriptionRevtex4, 6 pages, 5 Postscript figures, to be submitted to Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0501074
dc.identifierhttp://arxiv.org/abs/cond-mat/0501074
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25615
dc.subjectMesoscale and Nanoscale Physics
dc.titleDevelopment of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition
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