Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

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dc.creatorNikonov, Dmitri E.
dc.creatorBourianoff, George I.
dc.date2003-12-10
dc.date.accessioned2026-07-07T02:55:19Z
dc.date.available2026-07-07T02:55:19Z
dc.descriptionScheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.
dc.description34 pages, PDF file
dc.identifierhttps://arxiv.org/abs/cond-mat/0312243
dc.identifierhttp://arxiv.org/abs/cond-mat/0312243
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22898
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSpin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach
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