Stark Tuning of Donor Electron Spins in Silicon

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dc.creatorBradbury, Forrest R.
dc.creatorTyryshkin, Alexei M.
dc.creatorSabouret, Guillaume
dc.creatorBokor, Jeff
dc.creatorSchenkel, Thomas
dc.creatorLyon, Stephen A.
dc.date2006-03-12
dc.date.accessioned2026-07-07T07:42:57Z
dc.date.available2026-07-07T07:42:57Z
dc.descriptionWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.
dc.description10 pages, 4 figures, to be submitted to PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0603324
dc.identifierhttp://arxiv.org/abs/cond-mat/0603324
dc.identifierPRL 97, 176404 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.176404
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122639
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleStark Tuning of Donor Electron Spins in Silicon
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