Mechanism of Enhanced Rectification in Unimolecular Borromean Ring Devices

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dc.creatorScott, G. D.
dc.creatorChichak, K. S.
dc.creatorPeters, A. J.
dc.creatorCantrill, S. J.
dc.creatorStoddart, J. F.
dc.creatorJiang, H. W.
dc.date2006-11-06
dc.date.accessioned2026-07-07T07:31:14Z
dc.date.available2026-07-07T07:31:14Z
dc.descriptionWe have studied charge transport through individual Borromean Ring complexes, both with and without anchor groups, in gated double barrier tunneling junctions (DBTJs) formed using the electrical breakjunction technique on gold nanowires. While common single molecule device characteristics can be observed with either form of the Borromean Rings, the complexes with anchor groups show strong rectification of conduction in a relatively high percentage of samples. We present our data along with a simple model underlining the mechanism by which the arrangement and composition of the weakly bonding anchor groups attached to the electroactive element may promote a device configuration resulting in rectification.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0611161
dc.identifierhttp://arxiv.org/abs/cond-mat/0611161
dc.identifierG. D. Scott, K. S. Chichak, A. J. Peters, S. J. Cantrill, J. F. Stoddart, and H. W. Jiang, Phys. Rev. B, 74, 113404 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.113404
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/118679
dc.subjectMesoscale and Nanoscale Physics
dc.titleMechanism of Enhanced Rectification in Unimolecular Borromean Ring Devices
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