A controllable nanomechanical memory element

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dc.creatorBadzey, Robert L.
dc.creatorZolfagharkhani, Guiti
dc.creatorGaidarzhy, Alexei
dc.creatorMohanty, Pritiraj
dc.date2005-03-10
dc.date.accessioned2026-07-07T03:04:07Z
dc.date.available2026-07-07T03:04:07Z
dc.descriptionWe report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their sub-micron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing.
dc.identifierhttps://arxiv.org/abs/cond-mat/0503258
dc.identifierhttp://arxiv.org/abs/cond-mat/0503258
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26010
dc.subjectOther Condensed Matter
dc.subjectQuantum Physics
dc.titleA controllable nanomechanical memory element
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