Gate-voltage dependence of Kondo effect in a triangular quantum dot

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dc.creatorNumata, T.
dc.creatorNisikawa, Y.
dc.creatorOguri, A.
dc.creatorHewson, A. C.
dc.date2008-08-26
dc.date2009-03-12
dc.date.accessioned2026-07-07T13:16:15Z
dc.date.available2026-07-07T13:16:15Z
dc.descriptionWe study the conductance through a triangular triple quantum dot, which are connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occurring.
dc.description4 pages, 4 figs: typos just below (4) are corrected, results are not affected
dc.identifierhttps://arxiv.org/abs/0808.3496
dc.identifierhttp://arxiv.org/abs/0808.3496
dc.identifierJ. Phys.: Conference Series 150 (2009) 022067
dc.identifierdoi:10.1088/1742-6596/150/2/022067
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230730
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleGate-voltage dependence of Kondo effect in a triangular quantum dot
dc.typetext

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