Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

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dc.creatorHoxha, I.
dc.creatorVitkalov, S. A.
dc.creatorZimbovskaya, N. A.
dc.creatorSarachik, M. P.
dc.creatorKlapwijk, T. M.
dc.date2001-10-17
dc.date.accessioned2026-07-07T02:43:11Z
dc.date.available2026-07-07T02:43:11Z
dc.descriptionRectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
dc.description8 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0110331
dc.identifierhttp://arxiv.org/abs/cond-mat/0110331
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18395
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleMicrowave Rectification at the Boundary between Two-Dimensional Electron Systems
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