Quenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene

dc.creatorDarancet, Pierre
dc.creatorWipf, Nicolas
dc.creatorBerger, Claire
dc.creatorde Heer, Walt
dc.creatorMayou, Didier
dc.date2007-11-06
dc.date2008-05-13
dc.date.accessioned2026-07-07T09:38:08Z
dc.date.available2026-07-07T09:38:08Z
dc.descriptionWe propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene $n=0$ Landau level of the uncharged layers that produces a high density of states at the Fermi level. We find that the coupling between this $n=0$ Landau level and the conducting states of the doped plane leads to a scattering mechanism having the right magnitude to explain the experimental data.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0711.0940
dc.identifierhttp://arxiv.org/abs/0711.0940
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160700
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleQuenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene
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