Gauge-Invariant Formulation of Fermi's Golden Rule: Application to High-Field Transport in Semiconductors

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dc.creatorCiancio, Emanuele
dc.creatorRossi, Fausto
dc.date2001-05-25
dc.date.accessioned2026-07-07T02:41:32Z
dc.date.available2026-07-07T02:41:32Z
dc.descriptionA gauge-invariant formulation of Fermi's Golden rule is proposed. We shall rivisit the conventional description of carrier-phonon scattering in the presence of high electric fields by means of a gauge-invariant density-matrix approach. We show that the so-called Intracollisional Field Effect - as usually accounted for - does not exist: it is simply an artifact due to the neglect of the time variation of the basis states which, in turn, leads to a ill-defined Markov limit in the carrier-phonon interaction process. This may account for the surprisingly good agreement between semiclassical and rigorous quantum-transport calculations.
dc.description12 pages, preprint format
dc.identifierhttps://arxiv.org/abs/cond-mat/0105495
dc.identifierhttp://arxiv.org/abs/cond-mat/0105495
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17781
dc.subjectStatistical Mechanics
dc.titleGauge-Invariant Formulation of Fermi's Golden Rule: Application to High-Field Transport in Semiconductors
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