Magnetic and electronic transport percolation in epitaxial GeMn films

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dc.creatorPinto, N.
dc.creatorMorresi, L.
dc.creatorFiccadenti, M.
dc.creatorMurri, R.
dc.creatorD'Orazio, F.
dc.creatorLucari, F.
dc.creatorBoarino, L.
dc.creatorAmato, G.
dc.date2005-09-05
dc.date.accessioned2026-07-07T06:21:35Z
dc.date.available2026-07-07T06:21:35Z
dc.descriptionElectronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulator-like behavior in the whole temperature range and, below about 80 K, two distinct activation energies are observed. At a higher temperature value, TR, resistivity experiences a sudden reduction. Hall coefficient shows a strong contribution from the anomalous Hall effect and, at TR, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature TC not far from TR. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].
dc.description16 pages, 6 figures. To be published in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0509111
dc.identifierhttp://arxiv.org/abs/cond-mat/0509111
dc.identifierPhys. Rev. B 72, 165203 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.165203
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95642
dc.subjectMaterials Science
dc.titleMagnetic and electronic transport percolation in epitaxial GeMn films
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