Strain selectivity of SiGe wet chemical etchants

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dc.creatorStoffel, M.
dc.creatorMalachias, A.
dc.creatorMerdzhanova, T.
dc.creatorCavallo, F.
dc.creatorIsella, G.
dc.creatorChrastina, D.
dc.creatorvon Kaenel, H.
dc.creatorRastelli, A.
dc.creatorSchmidt, O. G.
dc.date2008-01-28
dc.date.accessioned2026-07-07T08:56:48Z
dc.date.available2026-07-07T08:56:48Z
dc.descriptionWe investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.
dc.description13 pages, 4 figures, regular paper
dc.identifierhttps://arxiv.org/abs/0801.4211
dc.identifierhttp://arxiv.org/abs/0801.4211
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146739
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleStrain selectivity of SiGe wet chemical etchants
dc.typetext

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