1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

Simple item page
dc.creatorDeville, G.
dc.creatorLeturcq, R.
dc.creatorL'Hote, D.
dc.creatorTourbot, R.
dc.creatorMellor, C. J.
dc.creatorHenini, M.
dc.date2005-10-06
dc.date.accessioned2026-07-07T06:25:21Z
dc.date.available2026-07-07T06:25:21Z
dc.descriptionTwo-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced.
dc.descriptionPDF, 4 pages, 2 figures, in: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF2005), September 19-23, 2005, Salamanca, Spain
dc.identifierhttps://arxiv.org/abs/cond-mat/0510142
dc.identifierhttp://arxiv.org/abs/cond-mat/0510142
dc.identifierAIP Conference Proceedings 780, 139-142 (2005)
dc.identifierdoi:10.1063/1.2036717
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96808
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.title1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs
dc.typetext

Files

Collections

arXiv