Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films

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dc.creatorWu, Wenhao
dc.creatorBielejec, E.
dc.date2005-11-04
dc.date.accessioned2026-07-07T06:45:52Z
dc.date.available2026-07-07T06:45:52Z
dc.descriptionElectron transport and tunneling across the superconductor-insulator (SI) transition have been measured simultaneously for quench-condensed ultrathin amorphous beryllium films. The anomalous negative magnetoresistance previously observed in insulating films disappears when Mn impurities are introduced to the films, restoring a rather clean Efros-Shklovskii type hopping behavior. The combination of transport and tunneling data allows us to determine, independently and up to a constant on the order of unity, the localization length, ξ_{L}, and the dielectric constant, κ, for the films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, ξ_{L} increases exponentially. The SI transition occurs when ξ_{L} crosses the Ginzburg-Landau coherence length, ξ_{S}.
dc.description10 pages, 5 figures, submitted to PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0511121
dc.identifierhttp://arxiv.org/abs/cond-mat/0511121
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103164
dc.subjectSuperconductivity
dc.subjectStrongly Correlated Electrons
dc.titleMeasuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films
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