Gate control of the tunneling magnetoresistance in double-barrier junctions
| dc.creator | Peralta-Ramos, J. | |
| dc.creator | Llois, A. M. | |
| dc.date | 2008-09-03 | |
| dc.date | 2008-09-08 | |
| dc.date.accessioned | 2026-07-07T10:00:55Z | |
| dc.date.available | 2026-07-07T10:00:55Z | |
| dc.description | We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions' TMR due to the tuning or untuning of conductance resonances mediated by quantum well states. The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values. | |
| dc.description | Paper was written Feb. 2008. v2: minor corrections (misspelled author's name,introduction); v3: two references added | |
| dc.identifier | https://arxiv.org/abs/0809.0626 | |
| dc.identifier | http://arxiv.org/abs/0809.0626 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/168471 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Gate control of the tunneling magnetoresistance in double-barrier junctions | |
| dc.type | text |