Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

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dc.creatorLemaître, Aristide
dc.creatorMiard, Audrey
dc.creatorTravers, Laurent
dc.creatorMauguin, Olivia
dc.creatorLargeau, Ludovic
dc.creatorGourdon, Catherine
dc.creatorJeudy, Vincent
dc.creatorTran, Michael
dc.creatorGeorge, Jean-Marie
dc.date2008-07-04
dc.date.accessioned2026-07-07T09:55:31Z
dc.date.available2026-07-07T09:55:31Z
dc.descriptionA small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.
dc.identifierhttps://arxiv.org/abs/0807.0748
dc.identifierhttp://arxiv.org/abs/0807.0748
dc.identifierApplied Physics Letters 93 (2008) 021123
dc.identifierdoi:10.1063/1.2963979
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/166653
dc.subjectMaterials Science
dc.titleStrain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
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