Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

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dc.creatorKeogh, J. A.
dc.creatorGupta, K. Das
dc.creatorBeere, H. E.
dc.creatorRitchie, D. A.
dc.creatorPepper, M.
dc.date2008-07-01
dc.date.accessioned2026-07-07T09:47:37Z
dc.date.available2026-07-07T09:47:37Z
dc.descriptionWe describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.
dc.description4 pages, 4 EPS figures
dc.identifierhttps://arxiv.org/abs/0807.0106
dc.identifierhttp://arxiv.org/abs/0807.0106
dc.identifierAPL 87, 202104 (2005)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163944
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleFabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures
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