Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

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dc.creatorNguyen, T. A.
dc.creatorMackowski, S.
dc.creatorRho, H.
dc.creatorJackson, H. E.
dc.creatorSmith, L. M.
dc.creatorWrobel, J.
dc.creatorFronc, K.
dc.creatorKossut, J.
dc.creatorKarczewski, G.
dc.creatorDobrowolska, M.
dc.creatorFurdyna, J.
dc.date2003-10-23
dc.date.accessioned2026-07-07T02:54:23Z
dc.date.available2026-07-07T02:54:23Z
dc.descriptionWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state - ground state relaxation is important for all dots in ensemble, while phonon - assisted processes are dominant for the dots with smaller lateral size.
dc.identifierhttps://arxiv.org/abs/cond-mat/0310571
dc.identifierhttp://arxiv.org/abs/cond-mat/0310571
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22526
dc.subjectMaterials Science
dc.titleResonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots
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