Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

Simple item page
dc.creatorDepuydt, A.
dc.creatorVan Haesendonck, C.
dc.creatorMaslova, N. S.
dc.creatorPanov, V. I.
dc.creatorRakov, V. V.
dc.creatorSavinov, S. V.
dc.date1999-05-12
dc.date.accessioned2026-07-07T03:13:26Z
dc.date.available2026-07-07T03:13:26Z
dc.descriptionWe have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic scale defects which can be identified as S dopant atoms and as As vacancies, respectively. The strong bias voltage dependence of the STM image of the impurities can be explained in terms of resonant tunneling through localized states which are present near the impurity.
dc.description3 pages, 4 figures, published in Appl. Phys. A 66, 171 (1998)
dc.identifierhttps://arxiv.org/abs/cond-mat/9905159
dc.identifierhttp://arxiv.org/abs/cond-mat/9905159
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29298
dc.subjectMaterials Science
dc.titleInfluence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy
dc.typetext

Files

Collections

arXiv