Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

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dc.creatorMinkov, G. M.
dc.creatorSherstobitov, A. A.
dc.creatorGermanenko, A. V.
dc.creatorRut, O. E.
dc.creatorLarionova, V. A.
dc.creatorZvonkov, B. N.
dc.date2004-09-14
dc.date.accessioned2026-07-07T12:08:20Z
dc.date.available2026-07-07T12:08:20Z
dc.descriptionLow-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.
dc.description7 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409342
dc.identifierhttp://arxiv.org/abs/cond-mat/0409342
dc.identifierPhys. Rev. B 71, 165312 (2005)
dc.identifierdoi:10.1103/PhysRevB.71.165312
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209281
dc.subjectDisordered Systems and Neural Networks
dc.titleAntilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures
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