Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

Simple item page
dc.creatorKorn, T.
dc.creatorSchulz, R.
dc.creatorFehringer, S.
dc.creatorWurstbauer, U.
dc.creatorSchuh, D.
dc.creatorWegscheider, W.
dc.creatorWu, M. W.
dc.creatorSchüller, C.
dc.date2008-09-22
dc.date2008-11-12
dc.date.accessioned2026-07-07T10:17:22Z
dc.date.available2026-07-07T10:17:22Z
dc.descriptionSemiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0809.3654
dc.identifierhttp://arxiv.org/abs/0809.3654
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/173832
dc.subjectOther Condensed Matter
dc.subjectMaterials Science
dc.titleManganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers
dc.typetext

Files

Collections

arXiv