A Two-Step Etching Method to Fabricate Nanopores in Silicon

dc.creatorWang, G. -J.
dc.creatorChen, W. -Z.
dc.creatorChang, K. J.
dc.date2008-02-21
dc.date.accessioned2026-07-07T09:22:26Z
dc.date.available2026-07-07T09:22:26Z
dc.descriptionA cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)
dc.identifierhttps://arxiv.org/abs/0802.3087
dc.identifierhttp://arxiv.org/abs/0802.3087
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155374
dc.subjectOther Computer Science
dc.titleA Two-Step Etching Method to Fabricate Nanopores in Silicon
dc.typetext

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