Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation

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dc.creatorColuccia, Maria R.
dc.creatorAppel, J. A.
dc.creatorChiodini, G.
dc.creatorChristian, D. C.
dc.creatorKwan, S.
dc.date2002-04-08
dc.date.accessioned2026-07-07T11:30:17Z
dc.date.available2026-07-07T11:30:17Z
dc.descriptionWe report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop electrode isolation on the n+-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4E14 p/cm2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.
dc.description8 pages in postscript format. Presented at 2001 IEEE Nuclear Science Symposium 4-10 November 2001 San Diego, California
dc.identifierhttps://arxiv.org/abs/hep-ex/0204010
dc.identifierhttp://arxiv.org/abs/hep-ex/0204010
dc.identifierIEEETrans.Nucl.Sci.49:1743-1749,2002
dc.identifierdoi:10.1109/TNS.2002.801710
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/196967
dc.subjectHigh Energy Physics - Experiment
dc.titleCharacterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation
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