Spectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2

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dc.creatorVaccaro, L.
dc.creatorCannas, M.
dc.creatorBoizot, B.
dc.date2005-03-30
dc.date.accessioned2026-07-07T03:04:21Z
dc.date.available2026-07-07T03:04:21Z
dc.descriptionThe relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme, proposed in literature for non bridging oxygen hole center, and account for the excitation/luminescence pathways occurring after UV and visible absorption
dc.description5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0503699
dc.identifierhttp://arxiv.org/abs/cond-mat/0503699
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26105
dc.subjectMaterials Science
dc.titleSpectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2
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