Advancements in Complementary Carbon Nanotube Field-Effect Transistors

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dc.creatorJavey, Ali
dc.creatorWang, Qian
dc.creatorKim, Woong
dc.creatorDai, Hongjie
dc.date2004-01-13
dc.date.accessioned2026-07-07T02:55:51Z
dc.date.available2026-07-07T02:55:51Z
dc.descriptionHigh performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 uA per tube. The lack of significant Fermi-level pinning at the nanotube-metal interfaces allows for fine-tuning of the barrier heights for p-and n-channel conductions by changing the contact metals. The air-stable p- and n-FETs thus obtained can be used for complementary nanoelectronics, as demonstrated with the fabrication of an inverter. Other important issues regarding nanotube FETs including hysteresis, OFF-state leak currents, choice of nanotube diameter, and threshold voltage control are discussed.
dc.identifierhttps://arxiv.org/abs/cond-mat/0401200
dc.identifierhttp://arxiv.org/abs/cond-mat/0401200
dc.identifierIEDM Technical Digest, 741 (2003)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23097
dc.subjectMesoscale and Nanoscale Physics
dc.titleAdvancements in Complementary Carbon Nanotube Field-Effect Transistors
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