Transient Effect of Negative Electric Current in Irradiated Semiconductors

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dc.creatorYukalov, V. I.
dc.creatorYukalova, E. P.
dc.date1999-08-19
dc.date.accessioned2026-07-07T03:14:17Z
dc.date.available2026-07-07T03:14:17Z
dc.descriptionThe peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means of external irradiation, for instance, charge-particle beams and laser irradiation. The transient effect of negative electric current is shown to arise under some specific conditions.
dc.description9 pages, revtex, no figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9908282
dc.identifierhttp://arxiv.org/abs/cond-mat/9908282
dc.identifierLaser Phys. 9 (1999) 638-644
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29615
dc.subjectCondensed Matter
dc.titleTransient Effect of Negative Electric Current in Irradiated Semiconductors
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