MBE Growth of Cubic InN
| dc.creator | Schoermann, J. | |
| dc.creator | As, D. J. | |
| dc.creator | Lischka, K. | |
| dc.date | 2007-02-06 | |
| dc.date.accessioned | 2026-07-07T07:44:59Z | |
| dc.date.available | 2026-07-07T07:44:59Z | |
| dc.description | Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN. | |
| dc.description | 3 pages with 3 figures; MRS Symposium, Fall Meeting 2006 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0702140 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0702140 | |
| dc.identifier | MRS Symp. Proc. Vol. 955E, I8.3 (2007) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/123393 | |
| dc.subject | Materials Science | |
| dc.title | MBE Growth of Cubic InN | |
| dc.type | text |