Vertical quantum wire realized with double cleaved-edge overgrowth

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dc.creatorRoth, S. F.
dc.creatorKrenner, H. J.
dc.creatorSchuh, D.
dc.creatorBichler, M.
dc.creatorGrayson, M.
dc.date2006-04-04
dc.date.accessioned2026-07-07T07:05:15Z
dc.date.available2026-07-07T07:05:15Z
dc.descriptionA quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0604083
dc.identifierhttp://arxiv.org/abs/cond-mat/0604083
dc.identifierAppl. Phys. Lett. 89, 032102 (2006)
dc.identifierdoi:10.1063/1.2222347
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109604
dc.subjectMesoscale and Nanoscale Physics
dc.titleVertical quantum wire realized with double cleaved-edge overgrowth
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