Local Tunneling Study of Three-Dimensional Order Parameter in the $π$-band of Al-doped MgB$_2$ Single Crystals

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dc.creatorGiubileo, F.
dc.creatorBobba, F.
dc.creatorScarfato, A.
dc.creatorCucolo, A. M.
dc.creatorKohen, A.
dc.creatorRoditchev, D.
dc.creatorZhigadlo, N.
dc.creatorKarpinski, J.
dc.date2006-04-13
dc.date.accessioned2026-07-07T08:17:39Z
dc.date.available2026-07-07T08:17:39Z
dc.descriptionWe have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Δ_π$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the doping resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $Δ_π= 2.3$ meV for x=0.1, while the $Δ_π/ T_C$ ratio increases monotonously with doping. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}\simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $Δ_π$ on nanometer scale.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0604354
dc.identifierhttp://arxiv.org/abs/cond-mat/0604354
dc.identifierPhysical Review B 76, 024507 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.024507
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/134163
dc.subjectSuperconductivity
dc.titleLocal Tunneling Study of Three-Dimensional Order Parameter in the $π$-band of Al-doped MgB$_2$ Single Crystals
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