Magnetic field-assisted manipulation and entanglement of Si spin qubits

dc.creatorCalderon, M. J.
dc.creatorKoiller, Belita
dc.creatorSarma, S. Das
dc.date2006-02-24
dc.date2006-08-04
dc.date.accessioned2026-07-07T07:01:57Z
dc.date.available2026-07-07T07:01:57Z
dc.descriptionArchitectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.
dc.description4 pages, 4 figures. 1 ref and 1 footnote added
dc.identifierhttps://arxiv.org/abs/cond-mat/0602597
dc.identifierhttp://arxiv.org/abs/cond-mat/0602597
dc.identifierPhys. Rev. B 74, 081302(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.74.081302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108440
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleMagnetic field-assisted manipulation and entanglement of Si spin qubits
dc.typetext

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