Single-electron tunneling in InP nanowires

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dc.creatorDe Franceschi, S.
dc.creatorvan Dam, J. A.
dc.creatorBakkers, E. P. A. M.
dc.creatorFeiner, L. F.
dc.creatorGurevich, L.
dc.creatorKouwenhoven, L. P.
dc.date2003-02-25
dc.date.accessioned2026-07-07T06:33:06Z
dc.date.available2026-07-07T06:33:06Z
dc.descriptionWe report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55 nm range and lengths of several microns. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 micron. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ~1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0302517
dc.identifierhttp://arxiv.org/abs/cond-mat/0302517
dc.identifierAppl. Phys. Lett. 83, 344 (2003)
dc.identifierdoi:10.1063/1.1590426
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/99086
dc.subjectMesoscale and Nanoscale Physics
dc.titleSingle-electron tunneling in InP nanowires
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