Variation of the hopping exponent in disordered silicon MOSFETs

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dc.creatorFerrus, T.
dc.creatorGeorge, R.
dc.creatorBarnes, C. H. W.
dc.creatorLumpkin, N.
dc.creatorPaul, D. J.
dc.creatorPepper, M.
dc.date2007-05-29
dc.date2008-09-27
dc.date.accessioned2026-07-07T10:05:24Z
dc.date.available2026-07-07T10:05:24Z
dc.descriptionWe observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.
dc.description6 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0705.4241
dc.identifierhttp://arxiv.org/abs/0705.4241
dc.identifierJ. Phys.: Condens. Matter 20, 415226 (2008)
dc.identifierdoi:10.1088/0953-8984/20/41/415226
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170002
dc.subjectStrongly Correlated Electrons
dc.subjectDisordered Systems and Neural Networks
dc.titleVariation of the hopping exponent in disordered silicon MOSFETs
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