Gate-controlled spin-splitting in quantum dots with ferromagnetic leads in the Kondo regime

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dc.creatorMartinek, J.
dc.creatorSindel, M.
dc.creatorBorda, L.
dc.creatorBarnas, J.
dc.creatorBulla, R.
dc.creatorKönig, J.
dc.creatorSchön, G.
dc.creatorMaekawa, S.
dc.creatorvon Delft, J.
dc.date2004-06-15
dc.date.accessioned2026-07-07T06:21:53Z
dc.date.available2026-07-07T06:21:53Z
dc.descriptionThe effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find that the $V_g$-dependence of the QD level spin-splitting strongly depends on the shape of the density of states (DOS). For one class of DOS shapes there is nearly no $V_g$-dependence, for another, $V_g$ can be used to control the magnitude and sign of the spin-splitting, which can be interpreted as a local exchange magnetic field. We find that the spin-splitting acquires a new type of logarithmic divergence. We give an analytical explanation for our numerical results and explain how they arise due to spin-dependent charge fluctuations.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0406323
dc.identifierhttp://arxiv.org/abs/cond-mat/0406323
dc.identifierPhys. Rev. B 72, 121302(R) (2005)
dc.identifierdoi:10.1103/PhysRevB.72.121302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95745
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleGate-controlled spin-splitting in quantum dots with ferromagnetic leads in the Kondo regime
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